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Comparative Study of Active-Over-Metal and Metal-Over-Active Amorphous IGZO Thin-Film Transistors With Low-Frequency Noise Measurements

Identifieur interne : 001F23 ( Main/Repository ); précédent : 001F22; suivant : 001F24

Comparative Study of Active-Over-Metal and Metal-Over-Active Amorphous IGZO Thin-Film Transistors With Low-Frequency Noise Measurements

Auteurs : RBID : Pascal:12-0177387

Descripteurs français

Pascal (Inist)
- Etude comparative, Matériau amorphe, Transistor couche mince, Bruit basse fréquence, Modulateur acoustooptique, Courant drain, Courant intense, Résistance série, Oxyde d'indium, Oxyde de gallium, Oxyde de zinc, Diélectrique.
Wicri :
- concept : Matériau amorphe.

English descriptors

KwdEn :
- 1/f noise, Acoustooptical modulator, Amorphous material, Comparative study, Dielectric materials, Drain current, Gallium oxide, High strength current, Indium oxide, Series resistance, Thin film transistor, Zinc oxide.

Abstract

Bottom-gate metal-over-active (MOA) and active-over-metal (AOM) amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs), with channel lengths varying from 1 to 16 μm, are investigated with low-frequency noise (LFN) measurements in the linear region of operation. In the low drain-current range, LFN originates from carrier number fluctuations, whereas in the high drain-current range, the noise is affected by the series resistance. The extracted gate-insulator trap densities near the interface lead to the conclusion that the AOM a-IGZO TFTs are superior compared to the MOA devices.

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<author><name sortKey="Tsormpatzoglou, Andreas" uniqKey="Tsormpatzoglou A">Andreas Tsormpatzoglou</name>
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<author><name sortKey="Hastas, Nikolaos A" uniqKey="Hastas N">Nikolaos A. Hastas</name>
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<author><name sortKey="Khan, Shahrukh" uniqKey="Khan S">Shahrukh Khan</name>
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<author><name sortKey="Hatalis, Miltiadis" uniqKey="Hatalis M">Miltiadis Hatalis</name>
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<author><name sortKey="Dimitriadis, Charalabos A" uniqKey="Dimitriadis C">Charalabos A. Dimitriadis</name>
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<term>Dielectric materials</term>
<term>Drain current</term>
<term>Gallium oxide</term>
<term>High strength current</term>
<term>Indium oxide</term>
<term>Series resistance</term>
<term>Thin film transistor</term>
<term>Zinc oxide</term>
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<term>Matériau amorphe</term>
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<term>Modulateur acoustooptique</term>
<term>Courant drain</term>
<term>Courant intense</term>
<term>Résistance série</term>
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<front><div type="abstract" xml:lang="en">Bottom-gate metal-over-active (MOA) and active-over-metal (AOM) amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs), with channel lengths varying from 1 to 16 μm, are investigated with low-frequency noise (LFN) measurements in the linear region of operation. In the low drain-current range, LFN originates from carrier number fluctuations, whereas in the high drain-current range, the noise is affected by the series resistance. The extracted gate-insulator trap densities near the interface lead to the conclusion that the AOM a-IGZO TFTs are superior compared to the MOA devices.</div>
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<s5>08</s5>
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Comparative Study of Active-Over-Metal and Metal-Over-Active Amorphous IGZO Thin-Film Transistors With Low-Frequency Noise Measurements

Comparative Study of Active-Over-Metal and Metal-Over-Active Amorphous IGZO Thin-Film Transistors With Low-Frequency Noise Measurements

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri